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 RB480K
Diodes
Shottky barrier diode
RB480K
!Applications Low current rectification !External dimensions (Units : mm)
2.00.2
0.90.1 0.7 0.20.1 0.250.1
2.00.2 1.30.1 0.65 0.65 0.250.1
0.90.1 0.7
1pin MARK
0.1Min.
0.20.1 0.65 0.65 1.30.1
0.20.1 0.150.05
0.250.1 0.65 0.65 1.30.1
0.250.1 0.150.05
!Construction Silicon epitaxial planar
ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343
There are two different markings.
!Circuit
!Absolute maximum ratings (Ta=25C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 45 40 0.1 1 125 -40+125
Unit V V A A C C
0.1Min.
3T
3T
!Features 1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3A Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability.
1.250.1 0.6 0.65 0.30.1
1.250.1
1.250.1
2.10.1
00.1
2.10.1
00.1
RB480K
Diodes
!Electrical characteristics (Ta=25C)
Parameter Forward voltage Symbol VF1 VF2 IR1 Reverse current IR2 Ct1 Capacitance between terminals Ct2 Min. - - - - - - Typ. - - - - 6.0 - Max. 0.45 0.60 1 5 - 25 Unit V V A A pF pF IF=10mA IF=100mA VR=10V VR=40V VR=10V, f=1MHz VR=0V Conditions
!Electrical characteristic curves (Ta=25C)
1 1m
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100 50
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
100m
25 C C
100
Ta=125C
20 10 5
75
25 C 5 C
Ta
=1
10m
10 75C 1 25C 100n
1m
100
-2
2 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V)
10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE : VF (V)
10n 0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE : VR (V)
Fig.1 Foward temperature chraracteristics
Fig.2 Reverse temperature chraracteristics
Fig.3 Capacitance between terminals chraracteristics
Ta=25C
20
I surge (A)
I surge
10
PULSE WIDTH
0 100 1m 10m 100m 1 PULSE WIDTH (sec)
Fig.4 Surge current chraracteristics


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