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RB480K Diodes Shottky barrier diode RB480K !Applications Low current rectification !External dimensions (Units : mm) 2.00.2 0.90.1 0.7 0.20.1 0.250.1 2.00.2 1.30.1 0.65 0.65 0.250.1 0.90.1 0.7 1pin MARK 0.1Min. 0.20.1 0.65 0.65 1.30.1 0.20.1 0.150.05 0.250.1 0.65 0.65 1.30.1 0.250.1 0.150.05 !Construction Silicon epitaxial planar ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343 There are two different markings. !Circuit !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 -40+125 Unit V V A A C C 0.1Min. 3T 3T !Features 1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3A Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. 1.250.1 0.6 0.65 0.30.1 1.250.1 1.250.1 2.10.1 00.1 2.10.1 00.1 RB480K Diodes !Electrical characteristics (Ta=25C) Parameter Forward voltage Symbol VF1 VF2 IR1 Reverse current IR2 Ct1 Capacitance between terminals Ct2 Min. - - - - - - Typ. - - - - 6.0 - Max. 0.45 0.60 1 5 - 25 Unit V V A A pF pF IF=10mA IF=100mA VR=10V VR=40V VR=10V, f=1MHz VR=0V Conditions !Electrical characteristic curves (Ta=25C) 1 1m CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 100m 25 C C 100 Ta=125C 20 10 5 75 25 C 5 C Ta =1 10m 10 75C 1 25C 100n 1m 100 -2 2 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE : VF (V) 10n 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE : VR (V) Fig.1 Foward temperature chraracteristics Fig.2 Reverse temperature chraracteristics Fig.3 Capacitance between terminals chraracteristics Ta=25C 20 I surge (A) I surge 10 PULSE WIDTH 0 100 1m 10m 100m 1 PULSE WIDTH (sec) Fig.4 Surge current chraracteristics |
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